J. Phys. IV France 08 (1998) Pr2-491-Pr2-494
Construction and modeling of reversible behavior of GO SiFe under bidimensional circular inductionD. Moussaoui, A. Kedous-Lebouc and B. Cornut
Laboratoire d'Électrotechnique de Grenoble, INPG/UJF, UMR 5529 du CNRS, BP. 46, 38402 Saint-Martin-d'Hères cedex, France
In this paper, a new method to obtain the reversible characteristic of GO SiFe sheet, under circular rotating induction is proposed. It uses dynamic clockwise and anticlockwise H locus and a suitable averaging. Tested for variable frequency, this method is valid and leads to identical characteristics from 10 to 300 Hz. However, for 400 Hz the curve obtained is larger and the method is no more correct. This effect is due to the non uniformity of the vectors B and H in the cross section of the sheet and can be clearly explained by a diffusion calculation. The reversible H locus points out the symmery of the sheet and the characteristic axes of the Goss texture. A modeling of such a behavior is attempted considering the applied field energy and the anisotropy energy with a reduced constant.
© EDP Sciences 1998