J. Phys. IV France
Volume 06, Numéro C3, Avril 1996
Proceedings of the Second European Workshop on Low Temperature Electronics
Page(s) C3-423 - C3-428
Proceedings of the Second European Workshop on Low Temperature Electronics

J. Phys. IV France 06 (1996) C3-423-C3-428

DOI: 10.1051/jp4:1996364

A High-Tc Superconductor Bolometer for Remote Sensing of Atmospheric OH

M.J.M.E. de Nivelle1, M.P. Bruijn1, M. Frericks1, R. de Vries1, J.J. Wijnbergen1, P.A.J. de Korte1, S. Sánchez2, M. Elwenspoek2, T. Heidenblut3, B. Schwierzi3, W. Michalke4 and E. Steinbeiss4

1  Space Research Organization Netherlands, Sorbonnelaan 2, 3584 CA Utrecht, The Netherlands
2  MESA Research Institute, P.O. Box 217, 7500 AE Enschede, The Netherlands
3  Institut für Halbleitertechnologie und Werkstoffe der Electrotechnik, Universität Hannover, 30167 Hannover, Germany
4  Institut für Physikalische Hochtechnologie, Helmholtzweg 4, 07743 Jena, Germany

The technological feasibility is being investigated of a high-Tc superconductor transition edge bolometer for far-infrared detection, which can meet the requirements of a Fabry-Perot based satellite instrument designed for remote sensing of atmospheric OH. These include a time constant τ;<0.3s, an operating temperature above 35 K, a diameter of 1.1 mm, and a noise equivalent power (NEP) smaller than about 4.0.10-12 W Hz½ for radiation with λ=85µm. Presently, no other sensor can meet these requirements. A NEP value of 3.10-11 W/Hz½ and τ=0.4ms has been realized with high-Tc bolometers on Si membranes with a receiving area of 0.85x0.85 mm2. By replacing the Si by Si3N4 we expect that the thermal conductance G can be reduced by more than a factor 20. This should result in a NEP less than 4.10-12 W/Hz and a time constant <1.1s. A bond-and-etch-back technique is used to prepare a mono crystalline silicon top layer on the Si3N4 membrane, which is necessary for the epitaxial growth of the superconductor. An absorption layer will be added to the detector to enhance the efficiency. Promising candidates for use as an absorption layer are metal black films with an efficiency η around 80% at 85 µm wavelength.

© EDP Sciences 1996