J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
Page(s) C5-143 - C5-150
Proceedings of the Tenth European Conference on Chemical Vapour Deposition

J. Phys. IV France 05 (1995) C5-143-C5-150

DOI: 10.1051/jphyscol:1995515

Chemical Vapour Deposition of Thick Tungsten Coatings : Raman Measurements and Mass Transport Modelling

M. Pons1, A. Benezech1, P. Huguet2, R. Gaufres2, Ph. Diez3 and D. Lafforet3

1  Laboratoire Science des Surfaces et Matériaux Carbonés, URA 413 du CNRS, ENSEEG - INPG, B.P.75, 38402 Saint-Martin d'Hères, France
2  Laboratoire de Spectrométrie Moléculaire, USTL, Place Eugène Bataillon, 34095 Montpellier, France
3  COMURHEX, B.P. 29, 26701 Pierrelatte, France

Thick tungsten coatings have been produced by chemical vapour deposition (CVD) from H2-WF6 at a temperature in the range 773- 1073 K under a reduced pressure. The experimental set-up is designed for in situ Raman analysis of the gas phase (temperature and WF6 concentration) during the growth of tungsten coatings. A two dimensional mass transport model was proposed. It assumes a simple chemical pathway. Only the H2 reduction of WF6 has been taken into account. The major objective of the paper is to report on the comparison between (i) the experimental deposition rate and the deposition rate predicted by the model, (ii) the values of temperature and gas phase composition deduced from Raman spectroscopy measurements and the values of these quantities obtained by numerical calculations. These comparisons have shown the predictive capabilities of the numerical modelling and that the temperature and WF6 partial pressures can be recorded by a Raman equipment during the deposition process.

© EDP Sciences 1995