J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
Page(s) C5-1101 - C5-1108
Proceedings of the Tenth European Conference on Chemical Vapour Deposition

J. Phys. IV France 05 (1995) C5-1101-C5-1108

DOI: 10.1051/jphyscol:19955130

Atomic Layer-by-Layer Epitaxy of Silicon and Germanium Using Flash Heating in CVD

J. Murota, M. Sakuraba, T. Watanabe, T. Matsuura and Y. Sawada

Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-77, Japan

Atomic layer-by-layer epitaxy control of Si and Ge in flash-heating CVD using SiH4 and GeH4 gases was investigated. Self-limiting SiH4 reaction on the Ge surface results in Si atomic-layer formation at substrate temperatures below 300 °C even without the flash heating. In the case of Ge growth, by increasing the flash light intensity and the GeH4 partial pressure, Ge atomic-layer growth on the wet-cleaned Si(100) was achieved with a single flash shot at 275 °C. Using these growth controls, resonant tunneling diodes of Ge / Si1Ge1(50Å) / Ge(50Å) / Si1Ge1(50Å) / Ge, in which the Si1Ge1 layers were formed by alternately depositing single atomic-layers of Si and Ge, were fabricated, and clear negative resistance in the current-voltage characteristic was observed at 10 K. The current peaks were expected to be assigned to a hole resonant tunneling via light-hole bound state in the Ge quantum well. This fact suggests that the diode structure has abrupt Si1Ge1/Ge interfaces by employing a low-temperature atomic layer-by-layer growth process below 300 °C.

© EDP Sciences 1995