J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
Page(s) C5-879 - C5-886
Proceedings of the Tenth European Conference on Chemical Vapour Deposition

J. Phys. IV France 05 (1995) C5-879-C5-886

DOI: 10.1051/jphyscol:19955104

Analysis of the Intermediate Layers Generated at the Film-Substrate Interface During the CVD Process of Diamond Synthesis

M.L. Terranova1, V. Sessa1, M. Rossi2, G. Vitali2, G. Cappuccio3 and C. Veroli4

1  Dip. di Scienze e Tecnologie Chimiche, Univ. "Tor Vergata", Via della Ricerca Scientifica, 00133 Roma, Italy
2  Dip. di Energetica, Univ. "La Sapienza", and INFM-UdR-RM1, Via A. Scarpa 14, 00161 Roma, Italy
3  CNR, Ist. Strutturistica Chimica, and INFN-LNF, Lab. Raggi X, P.O. Box 13, 00044 Frascati, Italy
4  CNR, Ist. di Chimica dei Materiali, P.O. Box 10, 00016 Monterotondo, Italy

In the present work the structural characteristics of diamond films, obtained by means of Hot Filament Chemical Vapour Deposition (HFCVD), on various substrates (glassy carbon, soda-lime glass, and titanium) are correlated with the formation of different intermediate carbonaceous layers at the filni/substrate interface. The surface morphology of the diamond was studied by electron microscopy, whereas the structural characteristics of the intermediate layers were investigated by means of reflection high-energy electron diffraction (RHEED) and X-ray powder diffraction (XRPD) techniques. Graphite-like and amorphous structures, respectively, were identified at the interface with glassy carbon and soda-lime glass substrates. RHEED and Grazing Incidence X-ray Diffraction measurements allowed us to determine the stratification sequence of the intemiediate carbonaceous layers grown on Ti. The XRPD technique was used to study the growth kinetics of diamond, TiC and TiH2 layers during the coating process. The features of diamond nucleation on the various substrates are discussed with reference to the structure of carbonaceous transition layers formed at the substrate/film interface.

© EDP Sciences 1995