J. Phys. IV France
Volume 05, Numéro C1, Janvier 1995
Europhysics Industrial Workshop EIW-12
Industrial Applications of Positron Annihilation
Page(s) C1-27 - C1-36
Europhysics Industrial Workshop EIW-12
Industrial Applications of Positron Annihilation

J. Phys. IV France 05 (1995) C1-27-C1-36

DOI: 10.1051/jp4:1995103

Application of Positron Annihilation in the Si Integrated Circuit (IC) Industry

Alec H. Reader1, 2, H. Schut3, R.A. Hakvoort3 and A. van Veen3

1  CNET : ST Microelectronics, Centre Commun, BP. 16, 38921 Crolles, France
2  Philips Research Labs, 5600 JA Eindhoven, The Netherlands
3  Interfaculty Reactor Institute, Mekelweg 15, 2629 JB Delft, The Netherlands

Currently the trend in the Si IC industry is to produce epitaxial material layers by advanced growth and deposition techniques. Examples of these are Si and SiGe low temperature epitaxy, Si selective epitaxy and metallic silicide epitaxy. In order to obtain good electrical properties it is important that the epitaxial material shows no extended lattice defects and has a minimal concentration of lattice point defects. Given the concentrations of these phenomena a sensitive experimental technique is required to characterise the materials. The application of the positron annihilation technique in this IC research area is demonstrated by two examples, namely, characterization of Si Molecular Beam Epitaxy (MBE) and Atmospheric Pressure Chemical Vapour Deposition (APCVD) epi-layers and the assessment of the quality of CoSi2 epi-layers produced by the solid-state reaction with the Si substrate and an amorphous Co75W25 sputtered layer. Results will be presented in terms of defect concentrations derived from positron diffusion lengths.

© EDP Sciences 1995