Numéro
J. Phys. IV France
Volume 04, Numéro C1, Janvier 1994
Récents Développements en Electrochimie Fondamentale et Appliquée
Page(s) C1-323 - C1-327
DOI http://dx.doi.org/10.1051/jp4:1994125
Récents Développements en Electrochimie Fondamentale et Appliquée

J. Phys. IV France 04 (1994) C1-323-C1-327

DOI: 10.1051/jp4:1994125

In-situ scanning tunneling microscopy of the semiconductor-electrolyte interface

P. ALLONGUE

UPR 15 du CNRS, Université P. & M. Curie, 4 Place Jussieu, Tour 22, 75005 Paris, France


Abstract
The great reactivity of semiconductor surfaces and the easy formation of oxide layers make in-situ STM imaging of the semiconductors/electrolyte interface difficult at a high resolution. Additionally, STM imaging of such interfaces requires some care as far tunneling conditions are concerned. The paper analyses this question with the system Si/NaOH to illustrate the latest advances concerning in-situ imaging of the semiconductor electrodes. The etching of the (111) face has been studied at an atomic level over a wide range of potentials and the effect of species added into the solution (to modify the dissolution reaction) has been also investigated.



© EDP Sciences 1994