Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-287 - C5-290
DOI http://dx.doi.org/10.1051/jp4:1993557
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-287-C5-290

DOI: 10.1051/jp4:1993557

Confined electron states in corrugated GaAs/AlAs superlattices

C. JOUANIN and D. BERTHO

Groupe d'Etude des Semiconducteurs, Université Montpellier II, CC074, place E. Bataillon, 34095 Montpellier cedex 5, France


Abstract
The electronic and optical properties of GaAs/AlAs superlattices grown in the [311] direction are investigated in the framework of an empirical tight-binding mode1 which includes second-neighbor interactions. The [311] superlattices are of great interest because of their non-flat interfaces and because the periodic corrugation which appears gives rise to a lateral confinement. This results in the formation of quantum wires which present a pronounced degree of optical anisotropy. The characteristics and the energy gap value of these wires are studied as functions of the layer thickness and the differences with [001]-grown superlattices are discussed. The calculated cross-over of T- and X-like levels is in good agreement with the experimental observations. The nature of the lowest conduction states is explained in terms of the symmetry of the superlattice.



© EDP Sciences 1993