Numéro
J. Phys. IV France
Volume 03, Numéro C4, Septembre 1993
4th International Workshop on Positron and Positronium Chemistry
Page(s) C4-169 - C4-175
DOI http://dx.doi.org/10.1051/jp4:1993423
4th International Workshop on Positron and Positronium Chemistry

J. Phys. IV France 03 (1993) C4-169-C4-175

DOI: 10.1051/jp4:1993423

A positron beam study of defects in SiO2

M. FUJINAMI1, N.B. CHILTON1, K ISHII2 and Y. OHKI2

1  Advanced Materials & Technology Research Laboratories, Nippon Steel Corporation Ida, Nakahara-ku, Kawasaki, Japan
2  Department of Electrical Engineering, Waseda University, Shinjuku-ku, Tokyo, Japan


Abstract
Defects in crystalline and amorphous SiO2 were studied by variable-energy positron annihilation spectroscopy in an attempt to clarify what defects in SiO2 are observable in positron annihilation studies. The level of the S parameter in amorphous SiO2 films grown by plasma chemical vapor deposition (CVD) in a tetraethylorthosilicate (TEOS) and O2 atmosphere was found to be correlated to the concentration of Si-OH in the silicon dioxide layer. The difference in S parameter between crystalline and amorphous SiO2 is assumed to be due to the effects of para-Ps self-annihilation in free volumes in the amorphous sample. The S parameters in crystalline and thermally grown silicon dioxide were both found to decrease after C ion implantation (1x1014 cm-2, 140 keV) or alternatively, ArF excimer laser (6.4eV) irradiation. Both methods are expected to produce numerous types of Frenkel defects of which, it is most likely that negatively charged species such as [MATH]Si-O- are the trapping sites. In the case of ion implantation into amorphous SiO2 a greatly lowered S parameter is observed, this is explained as a combination of defect trapping and reduction in para Ps production after ion implantation.



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