Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-247 - C3-254
DOI http://dx.doi.org/10.1051/jp4:1993333
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-247-C3-254

DOI: 10.1051/jp4:1993333

SiCN coatings prepared by PACVD from TMS-NH3-Ar system on steel

M. DUCARROIR1, W. ZHANG2 and R. BERJOAN3

1  IMP-CNRS, Université de Perpignan, 52 Avenue de Villeneuve, 66860 Perpignan cedex, France
2  Institute for Materials Research, Tohoku University Katahira 2-1-1, Aoba-ku, Sendai 980, Japan
3  IMP-CNRS, BP. 5, Odeillo, 66125 Font Romeu cedex, France


Abstract
SiCN coatings with continuous composition between Si3N4 and Sic (rich in Si) have been prepared by acting on the tetramethylsilane (TMS)/ammonia ratio in the gas phase. The deposit compositions (10 μm thick films) have been investigated by different means which stress the difficulties encountered. Nevertheless the trends are in fair agreement. An increase in ammonia partial pressure favors the incorporation of N in the deposits. XPS studies of the samples lead to the conclusion that the chemical environments of Si, C, N are more complicated than in a mixture situation ; there would be various bonding States. Deposition rates range from 12 μm h-1 up to 30 μm h-1 and are largely increased when dilution is reduced. Hardness and Young's modulus are driven by the C/N ratio : HV lies between 22.6 GPa (Si3N4) to 26.2 GPa (SiC) with respectively apparent Young's modulus from 250-295 up to 357-431. All the films exhibit an adhesion of same order though N tends to increase the critical loads.



© EDP Sciences 1993