Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-209 - C3-215
DOI http://dx.doi.org/10.1051/jp4:1993328
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-209-C3-215

DOI: 10.1051/jp4:1993328

Laser induced chemical vapour deposition of TiN coatings at atmospheric pressure

Y.H. CROONEN and G. VERSPUI

Nederlandse Philips Bedrijven B.V., CFT Technology, Building SAQ 1708, 5600 MD Eindhoven, The Netherlands


Abstract
Laser induced Chemical Vapour Deposition of a wide variety of materials has been studied extensively at reduced pressures. However, for this technique to be economically and industrially applicable, processes at atmospheric pressure are preferred. A model study was made on the substrate-coating system molybdenum-titaniumnitride focussing on the feasibility to deposit TiN films locally at atmospheric pressure. The results of this study turned out to be very promising. A Nd-YAG laser beam ([MATH] = 1064 nm), directed perpendicular to the substrate, is used to locally heat the substrate (pyrolytic atmospheric pressure Laser induced Chemical Vapour Deposition). The reactive atmosphere consists of TiCl4, N2 and H2. The Laser Chemical Vapour Deposited nitride coating is characterized by SEM, EDAX, XRD, XPS, SAM and microhardness tests. The results show that the coatings are pure, polycrystalline, stoichiometric TiN with a hardness in the range 1900 to 2300 HV. The influence of laser irradiation parameters on the temperature distribution induced in molybdenum and on the deposit shape, spatial distribution and microstructure of TiN films has been studied. A fast laser spot pyrometer was built for the in-situ temperature measurements. Depending on the deposition conditions, different types of profiles, microstructures and distribution widths are observed. Two examples of atmospheric pressure Laser CVD deposited TiN films on 3D-objects are given.



© EDP Sciences 1993