Numéro
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
Page(s) C3-51 - C3-58
DOI http://dx.doi.org/10.1051/jp4:1993306
Proceedings of the Ninth European Conference on Chemical Vapour Deposition

J. Phys. IV France 03 (1993) C3-51-C3-58

DOI: 10.1051/jp4:1993306

Low pressure silicon selective epitaxial growth and its thermodynamic considerations

L. YE, B.M. ARMSTRONG and H.S. GAMBLE

Institute of Advanced Microelectronics, Department of Electrical and Electronic Engineering The Queen's University of Belfast, Belfast BT9 5AH, United Kingdom


Abstract
In a rapid thermal processing reactor QUPLAS II, full selective epitaxial growth of silicon has been obtained using DCS in H2 without addition of HCl. This is mainly achieved by reducing total process pressure down to the millibar regime. Selectivity can also be controlled by reducing DCS gas flow rate ; however, the growth rate is greatly reduced. Process temperature has, on the other hand, a minor effect on selectivity control. The selective epitaxial growth (SEG) occurs under conditions of near thermodynamic equilibrium. Thus equilibrium partial pressures of the predominant species in the Si-H-Cl system have been calculated to give an insight into the experimental results. The availability of HCl species relative to silicon containing species in the gas phase, PHCl/PSi, has shown why no external HCl is required, for depositions in millibar regime or low DCS flow rate, to obtain full selectivity. While reaction system is near-equilibrium, the reposition of Cl, dissociated from Si containing species, into HCl species, plays an important role in determining the system etching function.



© EDP Sciences 1993