| Numéro |
J. Phys. IV France
Volume 09, Numéro PR10, December 1999
International Workshop on Electronic CrystalsECRYS-99 |
|
|---|---|---|
| Page(s) | Pr10-247 - Pr10-249 | |
| DOI | https://doi.org/10.1051/jp4:19991062 | |
International Workshop
on Electronic Crystals
ECRYS-99
J. Phys. IV France 09 (1999) Pr10-247-Pr10-249
DOI: 10.1051/jp4:19991062
1 Institute of Physics, P.O. Box 304, 10000 Zagreb, Croatia
2 Department of Physics, Faculty of Science, 10000 Zagreb, Croatia
3 University of Copenhagen, CISMI, 2100 Copenhagen, Denmark
© EDP Sciences 1999
ECRYS-99
J. Phys. IV France 09 (1999) Pr10-247-Pr10-249
DOI: 10.1051/jp4:19991062
Galvanomagnetic properties in the spin-density-wave phase of (TMTSF)2PF6
B. Korin-Hamzic1, M. Basletic2, N. Francetic2, A. Hamzic2 and K. Bechgaard31 Institute of Physics, P.O. Box 304, 10000 Zagreb, Croatia
2 Department of Physics, Faculty of Science, 10000 Zagreb, Croatia
3 University of Copenhagen, CISMI, 2100 Copenhagen, Denmark
Abstract
We have measured the magnetoresistance and the Hall effect in the spin-density-wave (SDW) state of (TMTSF)2PF6 down to 2K and in magnetic fields up to 9T in order to gain an additional insight into the nature of the possible subphases in the SDW state. We have found that the temperature dependent magnetoresistance anisotropy changes below 4K ; this change being maximal for the current in the lowest conductivity direction. The Hall resistivity has showed different magnetic field dependencies for 7>4K and T<4K. The resistivity and the Hall resistivity were also investigated as the function of the electric field. The backflow coefficient a does not change below 4K.
© EDP Sciences 1999