EDP Sciences Journals List
Issue J. Phys. IV France
Volume 08, Number PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3
Page(s) Pr3-209 - Pr3-212
DOI http://dx.doi.org/10.1051/jp4:1998346

Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3

J. Phys. IV France 08 (1998) Pr3-209-Pr3-212

DOI: 10.1051/jp4:1998346

A low noise, low power consumption CMOS cryogenic preamplifier for superconducting infrared detectors

Y. Hu1, G. Klisnick1, F. Voisin1, M. Redon1, A. Gaugue2 and A. Kreisler2

1  Laboratoire des Instruments et Systèmes, Université Pierre et Marie Curie (Paris 6), 4 place Jussieu, 75252 Paris cedex 05, France
2  Laboratoire de Génie Électrique de Paris, Universités Paris 6 et 11, URA 127 du CNRS, Supélec, Plateau du Moulon, 91192 Gif-sur-Yvette cedex, France


Abstract
A low noise, low power CMOS cryogenic preamplifier has been designed and tested at room and low temperature (77 K). Simulation results show that an input equivalent noise of 2.7 nV/√Hz at 10 kHz can be obtained at room temperature, whereas measurement results are 3.2nV/√Hz at 300 K and 2nV/√Hz at 77 K. This preamplifier has been used in conjunction with a thin YBaCuO superconducting film to make an integrated cryogenic infrared bolometer.



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