Modeling of the low temperature electron distribution function in ultra-fast transient situations for semiconductor devices

Abstract
A physics-based approach to the distribution function derived from the evolution of the distribution function as a result of scattering is presented. Instead of solving the Boltzmann transport equations or using the Monte Carlo simulation, the non-equilibrium distribution function can be determined efficiently using the physics-based approach. The approach is applied to model the non-equilibrium distribution function accounting for highly Non-Maxwellian effects at low temperature. Study shows that at low temperature the relatively weak scattering substantially enhances the non-Maxwellian nature of the electron distribution function. The Non-Maxwellian behavior at low temperature can be taken into account in the presented approach when the velocity relaxation is properly included in the model.