Numéro |
J. Phys. IV France
Volume 06, Numéro C5, Septembre 1996
International Field Emission SocietyIFES'96 Proceedings of the 43rd International Field Emission Symposium |
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Page(s) | C5-147 - C5-151 | |
DOI | https://doi.org/10.1051/jp4:1996524 |
International Field Emission Society
IFES'96
Proceedings of the 43rd International Field Emission Symposium
J. Phys. IV France 06 (1996) C5-147-C5-151
DOI: 10.1051/jp4:1996524
Department of Electrical and Computer Engineering, Florida International University, Miami, FL 33199, U.S.A.
© EDP Sciences 1996
IFES'96
Proceedings of the 43rd International Field Emission Symposium
J. Phys. IV France 06 (1996) C5-147-C5-151
DOI: 10.1051/jp4:1996524
Measurements of Modulation of the Current in a Field Emitter caused by a Laser
M. Brugat and M.J. HagmannDepartment of Electrical and Computer Engineering, Florida International University, Miami, FL 33199, U.S.A.
Abstract
Numerical simulations suggest that laser illumination of a field emitter increases the tunneling curent due to a resonant interaction in which tunneling electrons exchange quanta with the laser. Thus, a laser may be used as a gate, and a time-varying current is produced if the laser is amplitude modulated. We have measured an RF tunneling current of 0.4 nA when the tungsten tip of a sealed field emitter tube is illuminated with a laser diode that is amplitude modulated at 1 MHz, and the DC curent is 5µA. The laser diode increases the DC curent by 270 nA, which is attributed to tip heating. However, the RF current (0.4 nA) has a period less than estimates of the thermal relaxation time.
© EDP Sciences 1996