| Numéro |
J. Phys. IV France
Volume 04, Numéro C2, Février 1994
European Workshop on Piezoelectric Materials : Crystal Growth, Properties and Prospects
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|---|---|---|
| Page(s) | C2-169 - C2-172 | |
| DOI | https://doi.org/10.1051/jp4:1994219 | |
European Workshop on Piezoelectric Materials : Crystal Growth, Properties and Prospects
J. Phys. IV France 04 (1994) C2-169-C2-172
DOI: 10.1051/jp4:1994219
1 Dpto. Estructura y Propiedades de los Materiales, Facultad de Ciencias (UCA), Apdo. 40, 11510 Pto. Real (Cádiz), Spain
2 Dpto. Física Aplicada, Facultad de Ciencias (UAM), 28049 Cantoblanco (Madrid), Spain
3 Lab. Minéralogie-Cristallographie, UA 009 du CNRS, Universités P. et M. Curie et Paris VII, BP. 115, 75252 Paris cedex 05, France
© EDP Sciences 1994
J. Phys. IV France 04 (1994) C2-169-C2-172
DOI: 10.1051/jp4:1994219
Characterization of BSO crystals. A preliminary study
J. MARTÍNEZ1, M. GONZÁLEZ-MAÑAS1, M.A. CABALLERO1, E. DIÉGUEZ2 and B. CAPELLE31 Dpto. Estructura y Propiedades de los Materiales, Facultad de Ciencias (UCA), Apdo. 40, 11510 Pto. Real (Cádiz), Spain
2 Dpto. Física Aplicada, Facultad de Ciencias (UAM), 28049 Cantoblanco (Madrid), Spain
3 Lab. Minéralogie-Cristallographie, UA 009 du CNRS, Universités P. et M. Curie et Paris VII, BP. 115, 75252 Paris cedex 05, France
Abstract
Czochralski grown bismuth silicon oxide (BSO) crystals have been investigated by mean of synchrotron X-ray topography in order to study the quality of the crystals obtained. High quality single crystals can be obtained under conditions rather deviated from the equilibrium. The first results correlating the defects observed with the type of the interface are reported.
© EDP Sciences 1994