EDP Sciences Journals List
Issue J. Phys. IV France
Volume 03, Number C9, Décembre 1993
Proceedings of the 3rd International Symposium on High Temperature Corrosion and Protection of Materials
Actes du 3ème Colloque International sur la Corrosion et la Protection des Matériaux à Haute Température
Page(s) C9-C5-881 - C9-C5-888
DOI http://dx.doi.org/10.1051/jp4:1993991

Proceedings of the 3rd International Symposium on High Temperature Corrosion and Protection of Materials
Actes du 3ème Colloque International sur la Corrosion et la Protection des Matériaux à Haute Température

J. Phys. IV France 03 (1993) C9-C5-881-C9-C5-888

DOI: 10.1051/jp4:1993991

Oxidation behaviour of a hot isostatically pressed silicon nitride material

L. Themelin, M. Desmaison-Brut and M. Billy

Laboratoire de Céramiques Nouvelles, URA CNRS n° 320, 123, Avenue Albert Thomas, 87060 Limoges Cedex France


Abstract
The oxidation behaviour of a dense silicon nitride material containing the minimum amount of additives was studied. A silicon nitride powder was hot isostatically pressed in the presence of 0.5 wt% Y2O3 and 0.025 wt%Al2O3. The dense material obtained was oxidized for 24 hours, in an oxygen atmosphere within the temperature range 1475-1650°C. The high oxidation resistance of this material may be related to the low amount of sintering aid initially introduced and consequently to the composition of the grain boundary phase. According to the temperature, the apparent activation energies for the oxidation processes, ranged from 355 to 680 kJ/mole



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