Numéro |
J. Phys. IV France
Volume 03, Numéro C7, Novembre 1993
The 3rd European Conference on Advanced Materials and ProcessesTroisiéme Conférence Européenne sur les Matériaux et les Procédés Avancés |
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Page(s) | C7-987 - C7-990 | |
DOI | https://doi.org/10.1051/jp4:19937152 |
Troisiéme Conférence Européenne sur les Matériaux et les Procédés Avancés
J. Phys. IV France 03 (1993) C7-987-C7-990
DOI: 10.1051/jp4:19937152
Excimer laser induced melting and decomposition of technical ceramic surfaces and their properties
J. GROSSMANN1, A. EMMEL2, E. SCHUBERT2 and H.W. BERGMANN21 Fraunhofer Institut für Silicatforschung (ISC), Neunerplatz 2, 97082 Würzburg, Germany
2 Applikations- und Technikzentrum für Energieverfahrens, Umwelt- und Strömungstechnik (ATZ-EVUS), Department III, New Materials, New Technologies, Rinostr. 1, 92249 Wilseck, Germany
Abstract
The chemical, structural and topographical changes after the irradiation of technical oxide (Al2O3, ZrO2) and nonoxide ceramics (SiC, Si3N4) with a XeCl-Excimer Laser were studied as function of the applied energy density and number of pulses. The silicon-based nonoxide ceramics decomposed during a temperature and pressure induced process and an adherent up to 1,5 µm thick crystalline Si-layer remained on top of the specimen surface. In contrast, the oxide ceramics underwent a melting and rapid resolidification process without a chemical alteration. The minimization of surface defects on Al2O3 was used to generate a two-fold increase in Weibull's modulus m compared with untreated samples, whereas the silicon layer on top of SiC was helpful to generate and improve metal-ceramic joints between SiSiC and AlMgSi l.
© EDP Sciences 1993