REFLECTION-ABSORPTION IR SPECTROSCOPY AS AN IN-SITU PROBE OF THE SURFACE CHEMISTRY OF SEMICONDUCTOR GROWTH INTERMEDIATES : THE ADSORPTION OF TRIMETHYLGALLIUM AT GaAs (100) SURFACES AT 300 K
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J. Phys. IV France, 02 C2 (1991) C2-167-C2-173
DOI: 10.1051/jp4:1991220