GAS PHASE REACTION IN SYNTHESIS OF SiC FILMS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION FROM Si2H6 AND C2H2 AT 873 K L.-S. HONG, Y. SHIMOGAKI et H. KOMIYAMA J. Phys. IV France, 02 C2 (1991) C2-87-C2-93 DOI: 10.1051/jp4:1991210