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Electron transport in silicon nanostructures based on ultra-thin SOI

A. Pouydebasque, L. Montes, J. Zimmermann, F. Balestra, D. Fraboulet, D. Mariolle, J. Gautier, F. Schopfer, V. Bouchiat and L. Saminadayar

J. Phys. IV France, 12 3 (2002) 97-101

DOI: 10.1051/jp420020044

A. Pouydebasque

L. Montes

J. Zimmermann

F. Balestra

D. Fraboulet

D. Mariolle

J. Gautier

F. Schopfer

V. Bouchiat

L. Saminadayar

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Copyright / Publiée par : EDP Sciences