Journal de Physique IV

Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K

A.S. Nicolett, J.A. Martino, E. Simoen and C. Claeys

J. Phys. IV France, 08 PR3 (1998) Pr3-25-Pr3-28

DOI: 10.1051/jp4:1998306

A.S. Nicolett

J.A. Martino

E. Simoen

C. Claeys

Articles written by ALL the selected authors (AND)

Articles written by ANY OF the selected authors (OR)