Journal de Physique IV

Threshold Voltage Characteristics of Superconductor Gate nMOSFET at 4.2 K

I. Kurosawa, M. Maezawa, M. Aoyagi, H. Nakagawa, K. Yamamoto and S. Matsumoto

J. Phys. IV France, 06 C3 (1996) C3-73-C3-78

DOI: 10.1051/jp4:1996311

I. Kurosawa

M. Maezawa

M. Aoyagi

H. Nakagawa

K. Yamamoto

S. Matsumoto

Articles written by ALL the selected authors (AND)

Articles written by ANY OF the selected authors (OR)