Journal de Physique IV

Electron Injection into the Gate Oxide of MOS Structures at Liquid Nitrogen Temperature : Measurement and Simulation

B. Fischer, L. Selmi, A. Ghetti and E. Sangiorgi

J. Phys. IV France, 06 C3 (1996) C3-19-C3-24

DOI: 10.1051/jp4:1996303

B. Fischer

L. Selmi

A. Ghetti

E. Sangiorgi

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