Journal de Physique IV

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GAS PHASE REACTION IN SYNTHESIS OF SiC FILMS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION FROM Si₂H₆ AND C₂H₂ AT 873 K

L.-S. HONG, Y. SHIMOGAKI and H. KOMIYAMA

J. Phys. IV France, 02 C2 (1991) C2-87-C2-93

DOI: 10.1051/jp4:1991210

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