EXCITATION-ENHANCED DISLOCATION MOBILITY IN SEMICONDUCTORS G. VANDERSCHAEVE, C. LEVADE, A. FARESS, J. J. COUDERC et D. CAILLARDJ. Phys. IV France, 01 C6 (1991) C6-305-C6-315DOI: https://doi.org/10.1051/jp4:1991646
