SOME INSIGHT INTO THE NATURE OF THE SURFACE CHEMICAL PROCESSES INVOLVED IN THE MOVPE GROWTH OF GaAs FROM ARSINE AND TRIMETHYL- OR TRIETHYL-GALLIUM M. E. PEMBLE, D. S. BUHAENKO, H. PATEL, A. STAFFORD et A. G. TAYORJ. Phys. IV France, 02 C2 (1991) C2-155-C2-165DOI: https://doi.org/10.1051/jp4:1991219
