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Silicon carbonitride by remote microwave plasma CVD from organosilicon precursor: Growth mechanism and structure of resulting Si:C:N films

I. Blaszczyk-Lezak, A.M. Wrobel, M.P.M. Kivitorma, I.J. Vayrynen and A. Tracz
Applied Surface Science 253 (17) 7211 (2007)
DOI: 10.1016/j.apsusc.2007.02.193
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Silicon carbonitride thin-film coatings fabricated by remote hydrogen–nitrogen microwave plasma chemical vapor deposition from a single-source precursor: Growth process, structure, and properties of the coatings

A. M. Wrobel, I. Blaszczyk-Lezak and A. Walkiewicz-Pietrzykowska
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DOI: 10.1002/app.26109
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Silicon Carbonitride Films Produced by Remote Hydrogen Microwave Plasma CVD Using a (Dimethylamino)dimethylsilane Precursor

I. Blaszczyk-Lezak, A. M. Wrobel, M. P. M. Kivitorma and I. J. Vayrynen
Chemical Vapor Deposition 11 (1) 44 (2005)
DOI: 10.1002/cvde.200406316
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Remote hydrogen microwave plasma chemical vapor deposition of silicon carbonitride films from a (dimethylamino)dimethylsilane precursor: Characterization of the process, chemical structure, and surface morphology of the films

I. Blaszczyk-Lezak, A.M. Wrobel, M.P.M. Kivitorma, I.J. Vayrynen and T. Aoki
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DOI: 10.1016/j.diamond.2005.11.011
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Hard and High-Temperature-Resistant Silicon Carbonitride Coatings Based on N-Silyl-Substituted Cyclodisilazane Rings

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DOI: 10.1149/1.2838067
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Remote Hydrogen Microwave Plasma CVD of Silicon Carbonitride Films from a Tetramethyldisilazane Source. Part 1: Characterization of the Process and Structure of the Films

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DOI: 10.1002/cvde.200706586
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Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 1. Growth mechanism, structure, and surface morphology of silicon carbonitride films

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DOI: 10.1016/j.tsf.2005.09.192
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Physical and chemical properties of silicon carbonitride nanocrystalline films

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DOI: 10.1007/s10947-006-0096-z
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DIELECTRIC LAYERS BCxNy: SYNTHESIS BY THE DECOMPOSITION OF VAPORS OF ORGANOBORON COMPOUNDS, COMPOSITION AND CHEMICAL STRUCTURE

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Journal of Structural Chemistry 62 (10) 1631 (2021)
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Experimental Study of the Influence of CH4 and H2 on the Conformation, Chemical Composition, and Luminescence of Silicon Quantum Dots Inlaid in Silicon Carbide Thin Films Grown by Remote Plasma-Enhanced Chemical Vapor Deposition

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ACS Omega 7 (23) 19640 (2022)
DOI: 10.1021/acsomega.2c01384
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