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NiO layers on Ni RABiTS for epitaxial buffer deposition by LS MOCVD

D. Selbmann, J. Eickemeyer, H. Wendrock, C. Jimenez, S. Donet, F. Weiss, U. Miller, O. Stadel

J. Phys. IV France, 11 PR11 (2001) Pr11-239-Pr11-245

DOI: https://doi.org/10.1051/jp4:20011139

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Citations de cet article :

Effect of sulphur on cube texture formation in microalloyed nickel substrate tapes

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Processing of High Temperature Superconductors

Sandrine Beauquis, Sebastien Donet and Francois Weiss
Processing of High Temperature Superconductors 53 (2012)
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Preparation of<tex>$rm MZrO_3 (rm M=rm Ba,rm Sr)$</tex>Buffer Layers on Surface Oxidized Ni/NiO Templates by PLD and MOD

R. Huhne, B. Holzapfel, A. Kursumovic, et al.
IEEE Transactions on Appiled Superconductivity 15 (2) 3024 (2005)
DOI: 10.1109/TASC.2005.848710
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Improved Critical Current Densities of Coated Conductors by High Aspect Ratio Grains

Ruben Huhne, JÖrg Eickemeyer, Dietmar Selbmann, Ludwig Schultz and Bernhard Holzapfel
IEEE Transactions on Applied Superconductivity 17 (2) 3239 (2007)
DOI: 10.1109/TASC.2007.898939
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Epitaxial NiO buffer layer by chemical enhanced surface oxidation epitaxy on Ni–5%W RABiTS for YBCO coated conductors

B. Wörz, A. Heinrich and B. Stritzker
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DOI: 10.1016/j.physc.2004.11.014
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Investigation of the growth and stability of (1 0 0)[0 0 1] NiO films grown by thermal oxidation of textured (1 0 0)[0 0 1] Ni tapes for coated conductor applications during oxygen exposure from 700 to 1400 °C

A. Kursumovic, R. Hühne, R. Tomov, et al.
Acta Materialia 51 (13) 3759 (2003)
DOI: 10.1016/S1359-6454(03)00190-3
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Nucleation controlled surface oxidation epitaxy of thermally grown NiO on (001) Ni for coated conductor applications assisted by Mo or Mn microalloying

A. Kursumovic, R. Hühne, R. Tomov, et al.
Physica C: Superconductivity 405 (3-4) 219 (2004)
DOI: 10.1016/j.physc.2004.01.027
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Preparation of buffer layer architectures for YBa2Cu3O7−xcoated conductors based on surface oxidized Ni tapes

R Hühne, D Selbmann, J Eickemeyer, J Hänisch and B Holzapfel
Superconductor Science and Technology 19 (2) 169 (2006)
DOI: 10.1088/0953-2048/19/2/003
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