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Cited article:

Low‐frequency noise and deep‐level transient spectroscopy in LWIR Auger‐suppressed Hg1-xCdxTe heterostructure detector

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Optics Express 32 (25) 45096 (2024)
https://doi.org/10.1364/OE.540281

The Role of the Gate Geometry for Cryogenic HEMTs: Towards an Input Voltage Noise Below $0.5~\mathrm{nV}/\sqrt{\mathrm{Hz}}$ at 1 kHz and 4.2 K

Q. Dong, Y. X. Liang, U. Gennser, A. Cavanna and Y. Jin
Journal of Low Temperature Physics 167 (5-6) 626 (2012)
https://doi.org/10.1007/s10909-012-0459-0

Low frequency noise spectroscopy in InAs/GaAs resonant tunneling quantum dot infrared photodetectors

R.A. Rupani, S. Ghosh, X. Su and P. Bhattacharya
Microelectronics Journal 39 (3-4) 307 (2008)
https://doi.org/10.1016/j.mejo.2007.07.108

Low-Frequency Noise Assessment for Deep Submicrometer CMOS Technology Nodes

C. Claeys, A. Mercha and E. Simoen
Journal of The Electrochemical Society 151 (5) G307 (2004)
https://doi.org/10.1149/1.1683633