Article cité par

La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).

Article cité :

Experimental Study of the Influence of CH4 and H2 on the Conformation, Chemical Composition, and Luminescence of Silicon Quantum Dots Inlaid in Silicon Carbide Thin Films Grown by Remote Plasma-Enhanced Chemical Vapor Deposition

Rodrigo León-Guillén, Ana Luz Muñoz-Rosas, Jesús A. Arenas-Alatorre, et al.
ACS Omega 7 (23) 19640 (2022)
https://doi.org/10.1021/acsomega.2c01384

DIELECTRIC LAYERS BCxNy: SYNTHESIS BY THE DECOMPOSITION OF VAPORS OF ORGANOBORON COMPOUNDS, COMPOSITION AND CHEMICAL STRUCTURE

V. S. Sulyaeva, V. G. Kesler and M. L. Kosinova
Journal of Structural Chemistry 62 (10) 1631 (2021)
https://doi.org/10.1134/S0022476621100188

Hard and High-Temperature-Resistant Silicon Carbonitride Coatings Based on N-Silyl-Substituted Cyclodisilazane Rings

A. M. Wrobel, I. Blaszczyk-Lezak, A. Walkiewicz-Pietrzykowska, T. Aoki and J. Kulpinski
Journal of The Electrochemical Society 155 (4) K66 (2008)
https://doi.org/10.1149/1.2838067

Silicon carbonitride thin‐film coatings fabricated by remote hydrogen–nitrogen microwave plasma chemical vapor deposition from a single‐source precursor: Growth process, structure, and properties of the coatings

A. M. Wrobel, I. Blaszczyk‐Lezak and A. Walkiewicz‐Pietrzykowska
Journal of Applied Polymer Science 105 (1) 122 (2007)
https://doi.org/10.1002/app.26109

Silicon carbonitride by remote microwave plasma CVD from organosilicon precursor: Growth mechanism and structure of resulting Si:C:N films

I. Blaszczyk-Lezak, A.M. Wrobel, M.P.M. Kivitorma, I.J. Vayrynen and A. Tracz
Applied Surface Science 253 (17) 7211 (2007)
https://doi.org/10.1016/j.apsusc.2007.02.193

Remote Hydrogen Microwave Plasma CVD of Silicon Carbonitride Films from a Tetramethyldisilazane Source. Part 1: Characterization of the Process and Structure of the Films

A. M. Wrobel and I. Blaszczyk‐Lezak
Chemical Vapor Deposition 13 (11) 595 (2007)
https://doi.org/10.1002/cvde.200706586

Remote hydrogen microwave plasma chemical vapor deposition of silicon carbonitride films from a (dimethylamino)dimethylsilane precursor: Characterization of the process, chemical structure, and surface morphology of the films

I. Blaszczyk-Lezak, A.M. Wrobel, M.P.M. Kivitorma, I.J. Vayrynen and T. Aoki
Diamond and Related Materials 15 (9) 1484 (2006)
https://doi.org/10.1016/j.diamond.2005.11.011

Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 1. Growth mechanism, structure, and surface morphology of silicon carbonitride films

I. Blaszczyk-Lezak, A.M. Wrobel, T. Aoki, et al.
Thin Solid Films 497 (1-2) 24 (2006)
https://doi.org/10.1016/j.tsf.2005.09.192

Silicon Carbonitride Films Produced by Remote Hydrogen Microwave Plasma CVD Using a (Dimethylamino)dimethylsilane Precursor

I. Blaszczyk-Lezak, A. M. Wrobel, M. P. M. Kivitorma and I. J. Vayrynen
Chemical Vapor Deposition 11 (1) 44 (2005)
https://doi.org/10.1002/cvde.200406316

Physical and chemical properties of silicon carbonitride nanocrystalline films

N. I. Fainer, M. L. Kosinova, Yu. M. Rumyantsev and F. A. Kuznetsov
Journal of Structural Chemistry 45 (S1) S65 (2004)
https://doi.org/10.1007/s10947-006-0096-z