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Cited article:

CVD of ZrO₂ using ZrI₄ as metal precursor

K. Forsgren, A. Hårsta

J. Phys. IV France, 09 PR8 (1999) Pr8-487-Pr8-491

DOI: https://doi.org/10.1051/jp4:1999861

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This article has been cited by the following article(s):

CVD of Epitaxial SnO2 Films by the SnI4/O2 Precursor Combination

J. Sundqvist, M. Ottosson and A. Hårsta
Chemical Vapor Deposition 10 (2) 77 (2004)
https://doi.org/10.1002/cvde.200306279

Deposition of HfO[sub 2] Thin Films in HfI[sub 4]-Based Processes

Katarina Forsgren, Anders Hårsta, Jaan Aarik, et al.
Journal of The Electrochemical Society 149 (10) F139 (2002)
https://doi.org/10.1149/1.1504720

Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide

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Journal of Crystal Growth 231 (1-2) 262 (2001)
https://doi.org/10.1016/S0022-0248(01)01449-X

Dielectric Properties of Zirconium Oxide Grown by Atomic Layer Deposition from Iodide Precursor

Kaupo Kukli, Katarina Forsgren, Mikko Ritala, et al.
Journal of The Electrochemical Society 148 (12) F227 (2001)
https://doi.org/10.1149/1.1418379