N- and Al-K-Edge EXAFS of AIN Grown on GaAs by MBE
J. Phys. IV France, 7 C2 (1997) C2-1127-C2-1128
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Experimental determination of the N-p-partial density of states in the conduction band of GaN: Determination of the polytype fractions in mixed phase samples
M. Katsikini, E. C. Paloura and T. D. MoustakasJournal of Applied Physics 83 (3) 1437 (1998)
https://doi.org/10.1063/1.366905