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Cited article:

LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF SILICON NITRIDE

H. KANOH, O. SUGIURA, S. FUJIOKA, Y. ARAMAKI, T. HATTORI, M. MATSUMURA

J. Phys. IV France, 02 C2 (1991) C2-831-C2-837

DOI: https://doi.org/10.1051/jp4:1991298

PDF (337.5 KB)

This article has been cited by the following article(s):

The effects of post‐hydrogenation on amorphous‐silicon thin‐film transistors

Byung‐Chul Ahn, Koh‐Ichi Usami, Hiroshi Kanoh, Osamu Sugiura and Masakiyo Matsumura
Electronics and Communications in Japan (Part II: Electronics) 76 (10) 66 (1993)
https://doi.org/10.1002/ecjb.4420761008