| Numéro |
J. Phys. IV France
Volume 7, Numéro C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
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|---|---|---|
| Page(s) | C2-275 - C2-276 | |
| DOI | https://doi.org/10.1051/jp4/1997198 | |
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
J. Phys. IV France 7 (1997) C2-275-C2-276
DOI: 10.1051/jp4/1997198
1 Department of Chemistry, CERPIC, Laval University, Ste Foy, G1K 7P4, Québec, Canada
2 Department of Physics, CERPIC, Laval University, Ste Foy, G1K 7P4, Québec, Canada
© EDP Sciences 1997
J. Phys. IV France 7 (1997) C2-275-C2-276
DOI: 10.1051/jp4/1997198
Si-O-Si Angle Distribution in Amorphous Silica Characterized by EXAFS Multiple Scattering Calculations
A. Moen1, L. Le Noc1, D.T. On1, L. Bonneviot1, L. Lévesque2 and D. Roy21 Department of Chemistry, CERPIC, Laval University, Ste Foy, G1K 7P4, Québec, Canada
2 Department of Physics, CERPIC, Laval University, Ste Foy, G1K 7P4, Québec, Canada
Abstract
EXAFS-Multiple Scattering (MS) calculations has been performed to characterize the second shell of neighbours
around silicon in amorphous silica. To render the large Si-O-Si angle distribution, a combination of three regular [(Si(OSi)4]
structural models covering the 130 to 160° angle range is used in the calculations.
© EDP Sciences 1997