Journal de Physique IV

Simulation of Chemical Vapour Deposition of SiC from Methyltrichlorosilane in a Hot Wall Reactor

D. Neuschütz, M. Schierling and S. Zimdahl

J. Phys. IV France, 05 C5 (1995) C5-253-C5-260

DOI: 10.1051/jphyscol:1995529

D. Neuschütz

M. Schierling

S. Zimdahl

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