Journal de Physique IV

Monitoring of SiC Deposition in an Industrial CVI/CVD Reactor by In-Situ FTIR Spectroscopy

H. Mosebach, V. Hopfe, M. Erhard and M. Meyer

J. Phys. IV France, 05 C5 (1995) C5-97-C5-104

DOI: 10.1051/jphyscol:1995509

H. Mosebach

V. Hopfe

M. Erhard

M. Meyer

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