Journal de Physique IV

Study of the low frequency noise from 77 K to 300 K in NbN semiconductor thin films deposited on silicon

G. Leroy, J. Gest, P. Tabourier, J.-C. Carru, P. Xavier, E. André1 and J. Chaussy

J. Phys. IV France, 12 3 (2002) 175-178

DOI: 10.1051/jp420020062

G. Leroy

J. Gest

P. Tabourier

J.-C. Carru

P. Xavier

E. André1

J. Chaussy

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