SiGe Hetero FETs on silicon at cryogenic temperature F. Aniel, M. Enciso-Aguilar, N. Zerounian, L. Giguerre, P. Crozat, R. Adde, M. Zeuner, G. Höck, T. Hackbarth, H.-J. Herzog and U. König J. Phys. IV France, 12 3 (2002) 3-10 DOI: 10.1051/jp420020026
