Journal de Physique IV

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Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates

Y. Cordier, P. Lorenzini, M. Hugues, F. Semond, F. Natali, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart and J.-P. Faurie

J. Phys. IV France, 132 (2006) 365-368

Published online: 11 March 2006

DOI: 10.1051/jp4:2006132070

Y. Cordier

P. Lorenzini

M. Hugues

F. Semond

F. Natali

Z. Bougrioua

J. Massies

E. Frayssinet

B. Beaumont

P. Gibart

J.-P. Faurie

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Copyright / Published by: EDP Sciences