Journal de Physique IV

Microwave characteristics of hetero-junction impatt diodes based on SiC

V.V. Buniatyan, V.M. Aroutiounian, P.G. Soukiassian, K. Zekentes and Vaz. V. Buniatyan

J. Phys. IV France, 132 (2006) 355-357

Published online: 11 March 2006

DOI: 10.1051/jp4:2006132068

V.V. Buniatyan

V.M. Aroutiounian

P.G. Soukiassian

K. Zekentes

Vaz. V. Buniatyan

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