Journal de Physique IV

Polarized photoluminescence of the of GaInP₂ layers grown on GaAs and Ge substrates by MOVPE technique

T. Prutskij, C. Pelosi and R. Brito-Orta

J. Phys. IV France, 132 (2006) 295-299

Published online: 11 March 2006

DOI: 10.1051/jp4:2006132056

T. Prutskij

C. Pelosi

R. Brito-Orta

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