Journal de Physique IV

Precisely controlled anodic etching for processing of GaAs-based quantum nanostructures and devices

N. Shiozaki, T. Sato, M. Akazawa and H. Hasegawa

J. Phys. IV France, 132 (2006) 249-253

Published online: 11 March 2006

DOI: 10.1051/jp4:2006132047

N. Shiozaki

T. Sato

M. Akazawa

H. Hasegawa

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