Journal de Physique IV

Raman characterization of the In_0.14Ga_0.86As_0.13Sb_0.87 highly doped with Te grown on GaSb by liquid phase epitaxy

J. Díaz-Reyes, E. López-Cruz, J.G. Mendoza-Álvarez and S. Jiménez-Sandoval

J. Phys. IV France, 132 (2006) 211-214

Published online: 11 March 2006

DOI: 10.1051/jp4:2006132040

J. Díaz-Reyes

E. López-Cruz

J.G. Mendoza-Álvarez

S. Jiménez-Sandoval

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