Journal de Physique IV

Nucleation of SiC nanocrystals at the Si/SiO₂ interface: Effect of the interface properties

A. Pongrácz, G. Battistig, A.L. Tóth, Zs. Makkai, Cs. Dücső, K.V. Josepovits and I. Bársony

J. Phys. IV France, 132 (2006) 133-136

Published online: 11 March 2006

DOI: 10.1051/jp4:2006132026

A. Pongrácz

G. Battistig

A.L. Tóth

Zs. Makkai

Cs. Dücső

K.V. Josepovits

I. Bársony

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