Journal de Physique IV

Characterization of interface traps on MOS transistor submicronic by the three level charge pumping

M. Sellami, M. Bouchemat, M. Kahouadji and F. Djahli

J. Phys. IV France, 124 (2005) 321-325

DOI: 10.1051/jp4:2005124047

M. Sellami

M. Bouchemat

M. Kahouadji

F. Djahli

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