Journal de Physique IV

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Simulation of the large-area growth of homoepitaxial 4H-Sic by chemical vapor deposition

M. Pons, J. Mezière, J. M. Dedulle, S. Wan Tang Kuan, E. Blanquet, C. Bernard, P. Ferret, L. Di Cioccio, T. Billon and R. Madar

J. Phys. IV France, 11 PR3 (2001) Pr3-1079-Pr3-1086

DOI: 10.1051/jp4:20013135

M. Pons

J. Mezière

J. M. Dedulle

S. Wan Tang Kuan

E. Blanquet

C. Bernard

P. Ferret

L. Di Cioccio

T. Billon

R. Madar

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