Journal de Physique IV

Characterization and stressing properties of polysilicon TFTs utilizing oxide films deposited using TEOS

D.N. Kouvatsos, V.Em. Vamvakas and D. Davazoglou

J. Phys. IV France, 11 PR3 (2001) Pr3-1037-Pr3-1044

DOI: 10.1051/jp4:20013130

D.N. Kouvatsos

V.Em. Vamvakas

D. Davazoglou

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