Journal de Physique IV

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Annealing effects on electrical and structural properties of Al₂O₃ films deposited by ALD

Y. Chang, F. Ducroquet, L.G. Gosset, A. Sibai, V. Dashtizadeh, J.F. Damlencourt, G. Rollandan and F. Martin

J. Phys. IV France, 11 PR11 (2001) Pr11-139-Pr11-143

DOI: 10.1051/jp4:20011122

Y. Chang

F. Ducroquet

L.G. Gosset

A. Sibai

V. Dashtizadeh

J.F. Damlencourt

G. Rollandan

F. Martin

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